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Description
Datasheet Mar 21, 2011 IRF540PbF . SiHF540-E3. SnPb. IRF540. SiHF540. ABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted). PARAMETER. International. E Rectifier. PD-9.373H. |RF54O. HEXFET Power MOSFET. 0 Dynamic dv/dt Rating. 0 Repetitive Avalanche Rated. 0 175 C Operating IRF540N. HEXFET Power MOSFET. 03/13/01. Parameter. Typ. Max. Units. R JC. Junction-to-Case. . 1.15. R CS. Case-to-Sink, Flat, Greased Surface. IRF540PBF . 100. 77. 28. 20. 48. 21.3. 1. 150. IRF610PBF. 200. 1500. 3.3. 2.1. 5.5 . 3. 3.5. 36. IRF620PBF. 200. 800. 5.2. 3.3. 9.3. 5.3. 2.5. 50. IRF630PBF. 200.
| Part Number | IRF540PBF |
| Main Category | Discrete Semiconductor Products |
| Sub Category | Transistors - FETs, MOSFETs - Single |
| Brand | Yageo |
| Description | MOSFET N-CH 100V 28A TO-220AB |
| Series | - |
| Packaging | Tube |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 100V |
| Current - Continuous Drain (Id) @ 25°C | 28A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 72nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 1700pF @ 25V |
| Vgs (Max) | ±20V |
| FET Feature | - |
| Power Dissipation (Max) | 150W (Tc) |
| Rds On (Max) @ Id, Vgs | 77 mOhm @ 17A, 10V |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-220AB |
| Package / Case | TO-220-3 |
| Image |  |
IRF540PBF
YAG
4284
1.3
HK HEQING ELECTRONICS LIMITED
IRF540PBF
Yageo/
180
2.645
SUNTOP SEMICONDUCTOR CO., LIMITED
IRF540PBF
Yageo
5000
3.99
Belt (HK) Electronics Co
IRF540PBF
YAEGO
1500
5.335
Redstar Electronic Limited
IRF540PBF
YAG
90611
6.68
Cicotex Electronics (HK) Limited
